Robocrystallographer: Automated crystal structure text descriptions and analysis

Our ability to describe crystal structure features is of crucial importance when attempting to understand structure-property relationships in the solid state. In this paper, the authors introduce robocrystallographer, an open-source toolkit for analyzing crystal structures. This package combines new and existing open-source analysis tools to provide structural information, including the local coordination and polyhedral type, polyhedral connectivity, octahedral tilt angles, component-dimensionality, and molecule-within-crystal and fuzzy prototype identification. Using this information, robocrystallographer can generate text-based descriptions of crystal structures that resemble descriptions written by human crystallographers. The authors use robocrystallographer to investigate the dimensionalities of all compounds in the Materials Project database and highlight its potential in machine learning studies

Band gap and work function tailoring of SnOfor improved transparent conducting ability in photovoltaics

Transparent conducting oxides (TCOs) are an essential component in modern optoelectronic devices, such as solar panels and touch screens. Their ability to combine transparency and conductivity, two properties that are normally mutually exclusive, have made them the subject of intense research over the last 50 years. SnO2, doped with F or Sb, is a widely used and relatively inexpensive transparent conducting material, however, its electronic structure leaves scope for improving its properties for use in many TCO applications, especially in solar cell devices. Here we show using density functional theory that incorporation of Pb into SnO2 reduces the band gap through lowering of the conduction band minimum, thereby increasing the electron affinity. The electron effective mass at the conduction band minimum decreases alongside the band gap, indicating improved charge carrier mobilities. Furthermore, the calculated optical absorption properties show the alloys retain their transparency in the visible spectrum. Our results suggest that alloying of PbO2 with SnO2 will enable improved electronic properties, including a highly tuneable workfunction, which will open up the material for other applications, such as hole injection layers in organic photovoltaics

High Thermoelectric Performance and Defect Energetics of Multipocketed Full Heusler Compounds

We report a first-principles density-functional study of electron-phonon interactions in and thermoelectric transport properties of the full Heusler compounds Sr2BiAu and Sr2SbAu. Our results show that ultrahigh intrinsic bulk thermoelectric performance across a wide range of temperatures is physically possible and point to the presence of multiply degenerate and highly dispersive carrier pockets as the key factor for achieving this. Sr2BiAu, which features ten energy-aligned low-effective-mass pockets (six along Γ-X and four at L), is predicted to deliver n-type zT=0.4-4.9 at T=100-700 K. Comparison with the previously investigated compound Ba2BiAu shows that the additional L pockets in Sr2BiAu significantly increase its low-temperature power factor to a maximum value of 12 mW m-1 K-2 near T=300 K. However, at high temperatures the power factor of Sr2BiAu drops below that of Ba2BiAu because the L states are heavier and subject to strong scattering by phonon deformation, as opposed to the lighter Γ-X states, which are limited by polar-optical scattering. Sr2SbAu is predicted to deliver a lower n-type zT=3.4 at T=750 K due to appreciable misalignment between the L and Γ-X carrier pockets, generally heavier scattering, and a slightly higher lattice thermal conductivity. Soft acoustic modes, which are responsible for the low lattice thermal conductivity, also increase the vibrational entropy and high-temperature stability of these Heusler compounds, suggesting that their experimental synthesis may be feasible. The dominant intrinsic defects are found to be Au vacancies, which drive the Fermi level towards the conduction band and work in favor of n-doping

Beyond methylammonium lead iodide: prospects for the emergent field of ns(2) containing solar absorbers

The field of photovoltaics is undergoing a surge of interest following the recent discovery of the lead hybrid perovskites as a remarkably efficient class of solar absorber. Of these, methylammonium lead iodide (MAPI) has garnered significant attention due to its record breaking efficiencies, however, there are growing concerns surrounding its long-term stability. Many of the excellent properties seen in hybrid perovskites are thought to derive from the 6s(2) electronic configuration of lead, a configuration seen in a range of post-transition metal compounds. In this review we look beyond MAPI to other ns(2) solar absorbers, with the aim of identifying those materials likely to achieve high efficiencies. The ideal properties essential to produce highly efficient solar cells are discussed and used as a framework to assess the broad range of compounds this field encompasses. Bringing together the lessons learned from this wide-ranging collection of materials will be essential as attention turns toward producing the next generation of solar absorbers

First-principles insights into tin-based two-dimensional hybrid halide perovskites for photovoltaics

The two-dimensional (2D) hybrid halide perovskites have recently attracted attention due to their excellent photovoltaic performance. In comparison to their three-dimensional (3D) analogues, they show superior long-term durability and moisture tolerance. Meanwhile, their layered topology offers greater flexibility for electronic structure tuning. To date, most devices containing 2D perovskites have been based on Pb, which presents environment concerns and a possible roadblock to commercialisation due to its toxicity. The development of lead-free alternatives is therefore immensely important to facilitate the uptake of perovskite-based photovoltaics. Herein, we investigate the geometrical, electronic and optical properties of the semiconducting 2D tin perovskites (CH 3 (CH 2 ) 3 NH 3 ) 2 (CH 3 NH 3 ) n-1 Sn n I 3n+1 (n = 1, 2 and 3), using relativistic hybrid density functional theory calculations. We demonstrate that the band gaps of the series decrease with increasing perovskite-like layer thickness, from 1.85 eV (n = 1) to 1.38 eV (n = 3). We find strong and broad optical absorption across the series, in addition to small effective masses of electrons and holes in the laminar plane. The n = 3 composition displays a high spectroscopic limited maximum efficiency of 24.6%. Our results indicate this series of homologous 2D tin halide perovskites are a promising class of stable and efficient light-absorbing materials for photovoltaics

Correction: Lone pair driven anisotropy in antimony chalcogenide semiconductors

Correction for 'Lone pair driven anisotropy in antimony chalcogenide semiconductors' by Xinwei Wang et al., Phys. Chem. Chem. Phys., 2022, 24, 7195-7202, https://doi.org/10.1039/D1CP05373F

Defect Tolerance to Intolerance in the Vacancy-Ordered Double Perovskite Semiconductors Cs2SnI6 and Cs2TeI6.

Vacancy-ordered double perovskites of the general formula A2BX6 are a family of perovskite derivatives composed of a face-centered lattice of nearly isolated [BX6] units with A-site cations occupying the cuboctahedral voids. Despite the presence of isolated octahedral units, the close-packed iodide lattice provides significant electronic dispersion, such that Cs2SnI6 has recently been explored for applications in photovoltaic devices. To elucidate the structure-property relationships of these materials, we have synthesized solid-solution Cs2Sn1-xTexI6. However, even though tellurium substitution increases electronic dispersion via closer I-I contact distances, the substitution experimentally yields insulating behavior from a significant decrease in carrier concentration and mobility. Density functional calculations of native defects in Cs2SnI6 reveal that iodine vacancies exhibit a low enthalpy of formation, and that the defect energy level is a shallow donor to the conduction band rendering the material tolerant to these defect states. The increased covalency of Te-I bonding renders the formation of iodine vacancy states unfavorable and is responsible for the reduction in conductivity upon Te substitution. Additionally, Cs2TeI6 is intolerant to the formation of these defects, because the defect level occurs deep within the band gap and thus localizes potential mobile charge carriers. In these vacancy-ordered double perovskites, the close-packed lattice of iodine provides significant electronic dispersion, while the interaction of the B- and X-site ions dictates the properties as they pertain to electronic structure and defect tolerance. This simplified perspective based on extensive experimental and theoretical analysis provides a platform from which to understand structure-property relationships in functional perovskite halides